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AS4DDR232M64PBG-38 Datasheet(PDF) 8 Page - Micross Components

Part # AS4DDR232M64PBG-38
Description  iNTEGRATED Plastic Encapsulated Microcircuit
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Manufacturer  MICROSS [Micross Components]
Direct Link  http://www.micross.com
Logo MICROSS - Micross Components

AS4DDR232M64PBG-38 Datasheet(HTML) 8 Page - Micross Components

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iPEM
2.1 Gb SDRAM-DDR2
AS4DDR232M64PBG
AS4DDR232M64PBG
Rev. 1.4 01/10
8
Micross Components reserves the right to change products or specifications without notice.
MODE REGISTER (MR)
The mode register is used to define the specific mode of
operation of the DDR2 SDRAM. This definition includes the
selection of a burst length, burst type, CL, operating mode,
DLL RESET, write recovery, and power-down mode, as
shown in Figure 5. Contents of the mode register can be
altered by re-executing the LOAD MODE (LM) command. If
the user chooses to modify only a subset of the MR variables,
all variables (M0–M14) must be programmed when the
command is issued.
The mode register is programmed via the LM command
(bits BA1–BA0 = 0, 0) and other bits (M12–M0) will retain the
stored information until it is programmed again or the device
loses power (except for bit M8, which is selfclearing).
Reprogramming the mode register will not alter the contents
of the memory array, provided it is performed correctly.
The LM command can only be issued (or reissued) when all
banks are in the precharged state (idle state) and no bursts
are in progress. The controller must wait the specified time
t
MRD before initiating any subsequent operations such as
an ACTIVE command. Violating either of these requirements
will result in unspecified operation.
BURST LENGTH
Burst length is defined by bits M0–M3, as shown in Figure
5. Read and write accesses to the DDR2 SDRAM are burst-
oriented, with the burst length being programmable to either
four or eight. The burst length dete rmines the maximum
number of column locations that can be accessed for a given
READ or WRITE command.
When a READ or WRITE command is issued, a block of
columns equal to the burst length is effectively selected. All
accesses for that burst take place within this block, meaning
that the burst will wrap within the block if a boundary is reached.
The block is uniquely selected by A2–Ai when BL = 4 and by
A3–Ai when BL = 8 (where Ai is the most significant column
address bit for a given configuration). The remaining (least
significant) address bit(s) is (are) used to select the starting
location within the block. The programmed burst length applies
to both READ and WRITE bursts.
FIGURE 5 – MODE REGISTER (MR) DEFINITION
BURST TYPE
Accesses within a given burst may be programmed to be
either sequential or interleaved. The burst type is selected
via bit M3, as shown in Figure 5. The ordering of accesses
within a burst is determined by the burst length, the burst
type, and the starting column address, as shown in Table
2. DDR2 SDRAM supports 4-bit burst mode and 8-bit burst
mode only. For 8-bit burst mode, full interleave address
ordering is supported; however, sequential address ordering
is nibble-based.
()
Burst Length
PD
A9
A7 A6 A5 A4 A3
A8
A2 A1 A0
Mode Register (Mx)
Address Bus
9
7
6
5
4
3
8
2
1
0
A10
A12 A11
10
11
12
13
01
14
Reserved
Reserved
4
8
Reserved
Reserved
Reserved
Reserved
M0
0
1
0
1
0
1
0
1
M1
0
0
1
1
0
0
1
1
M2
0
0
0
0
1
1
1
1
0
1
Interleaved
M3
Reserved
Reserved
Reserved
3
4
5
6
Reserved
M4
0
1
0
1
0
1
0
1
M5
0
0
1
1
0
0
1
1
M6
0
0
0
0
1
1
1
1
0
1
Normal
M7
15
0
1
No
M8
Reserved
2
3
4
5
6
Reserved
Reserved
M9
0
1
0
1
0
1
0
1
M10
0
0
1
1
0
0
1
1
M11
0
0
0
0
1
1
1
1
WR
A13
MR
0
1
0
1
Mode Register (MR)
Extended Mode Register (EMR)
Extended Mode Register (EMR2)
Extended Mode Register (EMR3)
M15
0
0
1
1
0
1
Fast Exit
(Normal)
(Low Power)
M12
M14
Note: 1. Not used on this part
Slow Exit
CAS# Latency BT
BA0
BA1
Burst Length
Burst Type
Sequential
CAS Latency (CL)
Mo de
Test
DLL TM
DLL Reset
Yes
WRITE RECOVERY
Mo de Register Definition
PD mode


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