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IRL3303 Datasheet(PDF) 2 Page - International Rectifier

Part No. IRL3303
Description  HEXFET POWER MOSFET
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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 2 page
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IRL3303
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 20A, VGS = 0V
„
trr
Reverse Recovery Time
–––
72
110
ns
TJ = 25°C, IF = 20A
Qrr
Reverse RecoveryCharge
–––
180
280
nC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.035 –––
V/°C
Reference to 25°C, ID = 1mA
–––
––– 0.026
VGS = 10V, ID = 20A
„
–––
––– 0.040
VGS = 4.5V, ID = 17A
„
VGS(th)
Gate Threshold Voltage
1.0
–––
–––
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
12
–––
–––
S
VDS = 25V, ID = 20A
–––
–––
25
VDS = 30V, VGS = 0V
–––
–––
250
VDS = 24V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 16V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -16V
Qg
Total Gate Charge
–––
–––
26
ID = 20A
Qgs
Gate-to-Source Charge
–––
–––
8.8
nC
VDS = 24V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
15
VGS = 4.5V, See Fig. 6 and 13
„
td(on)
Turn-On Delay Time
–––
7.4
–––
VDD = 15V
tr
Rise Time
–––
200
–––
ID = 20A
td(off)
Turn-Off Delay Time
–––
14
–––
RG = 6.5Ω, VGS = 4.5V
tf
Fall Time
–––
36
–––
RD = 0.7Ω, See Fig. 10
„
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
870
–––
VGS = 0V
Coss
Output Capacitance
–––
340
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
170
–––
ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
nA
S
D
G
IDSS
Drain-to-Source Leakage Current
IGSS
LD
Internal Drain Inductance
–––
4.5
–––
LS
Internal Source Inductance
–––
7.5
–––
ns
µA
nH
RDS(on)
Static Drain-to-Source On-Resistance
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ ISD ≤ 20A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ VDD = 25V, starting TJ = 25°C, L = 470µH
RG = 25Ω, IAS = 20A. (See Figure 12)
Source-Drain Ratings and Characteristics
A
–––
–––
140
–––
–––
38
S
D
G




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