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IRL3303 Datasheet(PDF) 1 Page - International Rectifier

Part No. IRL3303
Description  HEXFET POWER MOSFET
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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HEXFET® Power MOSFET
IRL3303
PD - 9.1322B
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
VDSS = 30V
RDS(on) = 0.026Ω
ID = 38A
S
D
G
TO-220AB
8/25/97
Parameter
Min.
Typ.
Max.
Units
RθJC
Junction-to-Case
––––
––––
2.2
RθCS
Case-to-Sink, Flat, Greased Surface
––––
0.50
––––
°C/W
RθJA
Junction-to-Ambient
––––
––––
62
Thermal Resistance
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
38
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
27
A
IDM
Pulsed Drain Current

140
PD @TC = 25°C
Power Dissipation
68
W
Linear Derating Factor
0.45
W/°C
VGS
Gate-to-Source Voltage
±16
V
EAS
Single Pulse Avalanche Energy
‚
130
mJ
IAR
Avalanche Current

20
A
EAR
Repetitive Avalanche Energy

6.8
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw.
10 lbf•in (1.1N•m)
Absolute Maximum Ratings




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