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CJU40P04 Datasheet(PDF) 2 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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CJU40P04 Datasheet(HTML) 2 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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2 / 5 page  Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =-250µA -40 V Zero gate voltage drain current IDSS VDS =-40V, VGS =0V -1 µA Gate-body leakage current IGSS VDS =0V, VGS =±20V ±100 nA On characteristics (note1) Gate-threshold voltage VGS(th) VDS =VGS, ID =-250µA -1.5 -1.85 -3 V Static drain-source on-sate resistance RDS(on) VGS =-10V, ID =-12A 12 14 mΩ Forward transconductance g FS VDS =-5V, ID =-12A 34 S Dynamic characteristics (note 2) Input capacitance Ciss 2960 Output capacitance Coss 370 Reverse transfer capacitance Crss VDS =-20V,VGS =0V, f =1MHz 310 pF Switching characteristics (note 2) Total gate charge Qg 72 Gate-source charge Qgs 14 Gate-drain charge Qgd VDS=-20V, VGS=-10V, ID=-12A 15 nC Turn-on delay time td(on) 10 Turn-on rise time tr 18 Turn-off delay time td(off) 38 Turn-off fall time tf VDD=-20V, ID=-20A VGS=-10V,RG=3Ω, 24 ns Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) VSD VGS =0V, IS=-20A -1.2 V Continuous drain-source diode forward current (note3) IS -40 A Pulsed drain-source diode forward current ISM -160 A Notes: 1. Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 2. Guaranteed by design, not subject to production. 3. Surface Mounted on FR4 Board, t≤10 sec. www.cj-elec.com 2 A-3,Feb,2016 MOSFET ELECTRICAL CHARACTERISTICS a T =25 ℃ unless otherwise specified |
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