CJPF05N65 datasheet(2/4 Pages) JIANGSU

Part #	CJPF05N65

Description	N-Channel Power MOSFET

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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2 / 4 page

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Off characteristics

Drain-source breakdown voltage

V(BR)DSS

VGS = 0V, ID =250µA

650

Drain-source diode forward voltage

VSD

VGS = 0V, IS =5A

1.4

V

Zero gate voltage drain current

IDSS

VDS =650V, VGS =0V

1

µA

Gate-body leakage current

IGSS

VDS =0V, VGS =±30V

±

100

nA

On characteristics (note 2)

Gate-threshold voltage

VGS(th)

VDS =VGS, ID =250µA

2.0

3.5

4.0

V

Static drain-source on-resistance

RDS(on)

VGS =10V, ID =2.5A

2.2

2.4

Ω

Forward transconductance

gfs

VDS =50V, ID =2.5A

4

S

Dynamic characteristics (note 3)

Input capacitance

Ciss

670

Output capacitance

Coss

72

Reverse transfer capacitance

Crss

VDS =25V,VGS =0V,f =1MHz

8.5

pF

Switching characteristics (note 3)

Total gate charge

Qg

15

19

Gate-source charge

Qgs

2.5

Gate-drain charge

Qgd

VDS =520V,VGS =10V,ID =5A

6.6

nC

Turn-on delay time

td(on)

30

Turn-on rise time

tr

90

Turn-off delay time

td(off)

85

Turn-off fall time

tf

VDD=325V, RG=25Ω, ID =5A

100

ns

Notes :

1.

L=16.8mH, IL=5A, VDD=50V, RG=25Ω, Starting TJ=25

℃.

2.

Pulse Test: Pulse width≤300µs, duty cycle ≤2%.

3.

These parameters have no way to verify.

www.cj-elec.co

m

2

C,May,2016

MOSFET ELECTRICAL CHARACTERISTICS

a

T =25

℃ unless otherwise specified

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CJPF05N65 Datasheet(PDF) 2 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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