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MJE5730 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # MJE5730
Description  Silicon PNP Power Transistor
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJE5730 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
MJE5730
DESCRIPTION
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -300V(Min)
·
DC current gain -
: hFE = 30~150@ IC= -0.3A
·
With TO-220 Package
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for line operated audio output amplifier,switchmode
power supply drivers and other switching applications
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-300
V
VCEO
Collector-Emitter Voltage
-300
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1
A
ICM
Collector Current-Peak
-3
A
IB
Base Current
-1
A
PC
Collector Power Dissipation
@Ta=25℃
2
W
Collector Power Dissipation
@TC=25℃
40
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
3.125
℃
/W
Rth j-a
Thermal Resistance,Junction to Ambient
62.5
℃
/W


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