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T810-600G Datasheet(PDF) 5 Page - STMicroelectronics

Part # T810-600G
Description  8A TRIACS
Download  11 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

T810-600G Datasheet(HTML) 5 Page - STMicroelectronics

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BTA08, BTB08 and T8 Series
5/11
Figure 7: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width tp < 10 ms
and corresponding value of I2t
Figure 8: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
Figure 9: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values) (Snubberless & Logic level
types)
Figure 10: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values) (Standard types)
Figure 11: Relative variation of critical rate of
decrease of main current versus junction
temperature
Figure 12: DPAK and D2PAK Thermal resistance
junction to ambient versus copper surface under
tab (printed circuit board FR4, copper thickness:
35 µm)
0.01
0.10
1.00
10.00
10
100
1000
I
(A), I t (A s)
TSM
22
t (ms)
p
T initial=25°C
j
ITSM
dI/dt limitation:
50A/µs
I t
2
-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
T (°C)
j
I,I ,I [T ] /
GT H L
j
I
,I ,I [T =25°C]
GT H L
j
IGT
IH & IL
0.1
1.0
10.0
100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
(dV/dt)c (V/µs)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
TW
T835/CW/BW
T810/SW
0.1
1.0
10.0
100.0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
(dV/dt)c (V/µs)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
C
B
0
25
50
75
100
125
0
1
2
3
4
5
6
(dI/dt)c [T ] /
pecified]
j
(dI/dt)c [T s
j
T (°C)
j
0
4
8
1216202428323640
0
10
20
30
40
50
60
70
80
90
100
S(cm²)
R
(°C/W)
th(j-a)
DPAK
2
DPAK


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