Red LED

L11767

High output power red emitting diode

www.hamamatsu.com

1

Absolute maximum ratings (Ta=25 °C unless otherwise noted)

Parameter

Symbol

Condition

Value

Unit

Reverse voltage

5V

Forward current

60

mA

Derating rate of forward

current

Ta > 25 °C

0.8

mA/°C

Pulse forward current

Pulse width=10 μs

Duty ratio=1%

0.5

A

Derating rate of pulse

forward current

Ta > 25 °C

6.7

mA/°C

Power dissipation

P

180

mW

Operating temperature

Topr

-30 to +85

°C

Storage temperature

Tstg

-40 to +100

°C

Soldering condition

-

-

*1: Guaranteed to resist temperature cycle test of up to 5 cycles

*2: At a position at least 1 mm away from the lead base

Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the

product within the absolute maximum ratings.

Electrical and optical characteristics (Ta=25 °C)

Parameter

Symbol

Condition

Min.

Typ.

Max.

Unit

Peak emission wavelength

λp

650

660

670

nm

Spectral half-width

Δλ

-18

30

nm

Forward voltage

-

2.1

2.5

V

Reverse current

--

20

μA

Radiant flux

φe

10

13

-

mW

fc

3

6

-

MHz

*3: Frequency at which the light output drops by 3 dB relative to the output at 100 kHz

The L11767 is a high output red LED that delivers light output more than twice that of our previous products. Electric power

required to provide the same brightness as the previous products is reduced by as much as 70%. The L11767 also offers

high reliability since it is a 4-element (AlGaInP) LED.

Features

Applications

High radiant output power (more than twice compared to previous products)

High reliability

Optical switches, etc.