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MC74HC73A Datasheet(PDF) 2 Page - ON Semiconductor

Part # MC74HC73A
Description  Dual J-K Flip-Flop with Reset
Download  7 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC74HC73A Datasheet(HTML) 2 Page - ON Semiconductor

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MC74HC73A
www.onsemi.com
2
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
Vin
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
V
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Iin
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 50
mA
PD
Power Dissipation in Still Air
SOIC Package†
500
mW
Tstg
Storage Temperature
– 65 to + 150
_C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
(PSOIC Package)
260
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of
these limits are exceeded, device functionality should not be assumed, damage may occur and
reliability may be affected.
†Derating — SOIC Package: – 7 mW/
_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, Vout
DC Input Voltage, Output Voltage (Referenced to GND)
0
VCC
V
TA
Operating Temperature, All Package Types
– 55
+ 125
_C
tr, tf
Input Rise and Fall Time
VCC = 2.0 V
(Figure 1)
VCC = 4.5 V
VCC = 6.0 V
0
0
0
1000
500
400
ns
Functional operation above the stresses listed in the Recommended Operating Ranges is not
implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may
affect device reliability.
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
Test Conditions
VCC
V
Guaranteed Limit
Unit
– 55 to
25
_C
v 85_C
v 125_C
VIH
Minimum High−Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 μA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
VIL
Maximum Low−Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 μA
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
VOH
Minimum High−Level Output
Voltage
Vin = VIH or VIL
|Iout| v 20 μA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin = VIH or VIL
|Iout| v 4.0 mA
|Iout| v 5.2 mA
4.5
6.0
3.98
5.48
3.84
5.34
3.70
5.20
VOL
Maximum Low−Level Output
Voltage
Vin = VIH or VIL
|Iout| v 20 μA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH or VIL
|Iout| v 4.0 mA
|Iout| v 5.2 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.40
0.40
Iin
Maximum Input Leakage Current
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
μA
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0 μA
6.0
4
40
80
μA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND
v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.


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