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IPP320N20N3G Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IPP320N20N3G Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 11 page IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 1770 2350 pF Output capacitance C oss - 135 180 Reverse transfer capacitance C rss -4 - Turn-on delay time t d(on) -11- ns Rise time t r -9 - Turn-off delay time t d(off) -21- Fall time t f -4 - Gate Charge Characteristics 4) Gate to source charge Q gs -8 - nC Gate to drain charge Q gd -3 - Switching charge Q sw -5 - Gate charge total Q g -22 29 Gate plateau voltage V plateau - 4.4 - V Output charge Q oss V DD=100 V, V GS=0 V -54 72 nC Reverse Diode Diode continous forward current I S - - 34 A Diode pulse current I S,pulse - - 136 Diode forward voltage V SD V GS=0 V, I F=34 A, T j=25 °C - 0.9 1.2 V Reverse recovery time t rr - 110 - ns Reverse recovery charge Q rr - 500 - nC 4) See figure 16 for gate charge parameter definition V R=100 V, I F=17 A, di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=100 V, f =1 MHz V DD=100 V, V GS=10 V, I D=17 A, R G=1.6 Ω V DD=100 V, I D=17 A, V GS=0 to 10 V Rev. 2.3 page 3 2011-05-20 |
Similar Part No. - IPP320N20N3G_11 |
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Similar Description - IPP320N20N3G_11 |
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