IPP320N20N3G_11 datasheet(3/11 Pages) INFINEON

Part #	IPP320N20N3G

Description	OptiMOSTM3 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPB320N20N3 G

IPP320N20N3 G

IPI320N20N3 G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

-

1770

2350

pF

Output capacitance

C oss

-

135

180

Reverse transfer capacitance

C rss

-4

-

Turn-on delay time

t d(on)

-11-

ns

Rise time

t r

-9

-

Turn-off delay time

t d(off)

-21-

Fall time

t f

-4

-

Gate Charge Characteristics

4)

Gate to source charge

Q gs

-8

-

nC

Gate to drain charge

Q gd

-3

-

Switching charge

Q sw

-5

-

Gate charge total

Q g

-22

29

Gate plateau voltage

V plateau

-

4.4

-

V

Output charge

Q oss

V DD=100 V, V GS=0 V

-54

72

nC

Reverse Diode

Diode continous forward current

I S

-

34

A

Diode pulse current

I S,pulse

-

136

Diode forward voltage

V SD

V GS=0 V, I F=34 A,

T j=25 °C

-

0.9

1.2

V

Reverse recovery time

t rr

-

110

-

ns

Reverse recovery charge

Q rr

-

500

-

nC

4) See figure 16 for gate charge parameter definition

V R=100 V, I F=17 A,

di F/dt =100 A/µs

T C=25 °C

Values

V GS=0 V, V DS=100 V,

f

=1 MHz

V DD=100 V,

V GS=10 V, I D=17 A,

R G=1.6 Ω

V DD=100 V, I D=17 A,

V GS=0 to 10 V

Rev. 2.3

page 3

2011-05-20

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IPP320N20N3G Datasheet(PDF) 3 Page - Infineon Technologies AG

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