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IPD50R2K0CE Datasheet(PDF) 4 Page - Infineon Technologies AG |
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IPD50R2K0CE Datasheet(HTML) 4 Page - Infineon Technologies AG |
4 / 14 page 4 500VCoolMOSªCEPowerTransistor IPD50R2K0CE,IPU50R2K0CE Rev.2.3,2016-06-13 Final Data Sheet 3Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 500 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 2.50 3 3.50 V VDS=VGS,ID=0.05mA Zero gate voltage drain current IDSS - - - 10 1 - µA VDS=500V,VGS=0V,Tj=25°C VDS=500V,VGS=0V,Tj=150°C Gate-source leakage curent IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - - 1.80 4.68 2.00 - Ω VGS=13V,ID=0.6A,Tj=25°C VGS=13V,ID=0.6A,Tj=150°C Gate resistance RG - 7 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 124 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 9 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related 1) Co(er) - 8 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related 2) Co(tr) - 26 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 6 - ns VDD=400V,VGS=13V,ID=0.8A, RG=5.3 Ω Rise time tr - 5 - ns VDD=400V,VGS=13V,ID=0.8A, RG=5.3 Ω Turn-off delay time td(off) - 21 - ns VDD=400V,VGS=13V,ID=0.8A, RG=5.3 Ω Fall time tf - 38 - ns VDD=400V,VGS=13V,ID=0.8A, RG=5.3 Ω Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 0.7 - nC VDD=400V,ID=0.8A,VGS=0to10V Gate to drain charge Qgd - 3.5 - nC VDD=400V,ID=0.8A,VGS=0to10V Gate charge total Qg - 6 - nC VDD=400V,ID=0.8A,VGS=0to10V Gate plateau voltage Vplateau - 5.4 - V VDD=400V,ID=0.8A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS |
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