TB0640M - TB3500M

Features

50A Peak Pulse Current @ 10/1000ms

250A Peak Pulse Current @ 8/20ms

58 - 320V Stand-Off Voltages

Oxide-Glass Passivated Junction

Bi-Directional Protection In a Single Device

High Off-State impedance and Low On-State

Voltage

Single phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%.

Characteristic

Symbol

Value

Unit

Non-Repetitive Peak Impulse Current

@10/1000us

50

A

Non-Repetitive Peak On-State Current

@8.3ms (one-half cycle)

30

A

Junction Temperature Range

-40 to +150

°

C

Storage Temperature Range

-55 to +150

°

C

Thermal Resistance, Junction to Lead

20

°C/W

Thermal Resistance, Junction to Ambient

100

°C/W

Typical Positive Temperature Coefficient for Breakdown Voltage

D

0.1

%/°C

Maximum Rated Surge Waveform

Waveform

Standard

Ipp (A)

2/10 us

GR-1089-CORE

300

8/20 us

IEC 61000-4-5

250

10/160 us

FCC Part 68

150

10/700 us

ITU-T, K20/K21

100

10/560 us

FCC Part 68

75

10/1000 us

GR-1089-CORE

50

0

TIME

100

50

0

Peak Value (I )

pp

Half Value

t = rise time to peak value

r

t = decay time to half value

p

t

r

t

p

1 of 3

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THYRISTOR SURGE SUPPRESSORS

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Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

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Polarity: Cathode Band or Cathode Notch

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Marking: Type Number

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Mechanical Data

Case: SMB/DO-214AA, Molded Plastic

Weight: 0.093 grams (approx.)

SMB(DO-214AA)

Dim

Min

Max

A

B

C

1.91

2.21

D

0.15

0.31

E

5.00

5.59

G

0.10

0.20

H

0.76

1.52

J

2.00

2.62

All Dimensions in mm

A

B

C

D

G

H

E

J

3.30

3.94

4.06

4.70

A

B

C

D

G

H

E

J