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ME2303 Datasheet(PDF) 1 Page - SUNMATE electronic Co., LTD |
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ME2303 Datasheet(HTML) 1 Page - SUNMATE electronic Co., LTD |
1 / 5 page ME2303(-G) Sep, 2008-Ver2.1 Parameter Symbol Limit Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V TA=25℃ -3.2 Continuous Drain Current (Tj=150℃)* TA=70℃ ID -2.6 A Pulsed Drain Current IDM -10 A TA=25℃ 1.25 Maximum Power Dissipation TA=70℃ PD 0.8 W Operating Junction Temperature TJ -55 to 150 ℃ Storage Temperature Range Tstg -55 to 150 ℃ Typical Maximum Thermal Resistance-Junction to Ambient* RθJA 100 175 ℃/W GENERAL DESCRIPTION The ME2303 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON) ≦75mΩ@VGS=-10V ● RDS(ON) ≦100mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC PIN CONFIGURATION (SOT-23) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) e * The device mounted on 1in 2 FR4 board with 2 oz copper e Ordering Information: ME2303 (Pb-free) ME2303-G (Green product) |
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