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ME2303 Datasheet(PDF) 1 Page - SUNMATE electronic Co., LTD

Part # ME2303
Description  Super high density cell design for extremely low RDS(ON)
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Manufacturer  SUNMATE [SUNMATE electronic Co., LTD]
Direct Link  http://www.sunmate.tw/
Logo SUNMATE - SUNMATE electronic Co., LTD

ME2303 Datasheet(HTML) 1 Page - SUNMATE electronic Co., LTD

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ME2303(-G)
Sep, 2008-Ver2.1
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
TA=25℃
-3.2
Continuous Drain Current
(Tj=150℃)*
TA=70℃
ID
-2.6
A
Pulsed Drain Current
IDM
-10
A
TA=25℃
1.25
Maximum Power Dissipation
TA=70℃
PD
0.8
W
Operating Junction Temperature
TJ
-55 to 150
Storage Temperature Range
Tstg
-55 to 150
Typical
Maximum
Thermal Resistance-Junction to Ambient*
RθJA
100
175
℃/W
GENERAL DESCRIPTION
The ME2303 is the P-Channel logic enhancement mode power field
effect transistors are produced using high cell density , DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where low in-line power loss are needed in a very small outline
surface mount package.
FEATURES
RDS(ON) ≦75mΩ@VGS=-10V
RDS(ON) ≦100mΩ@VGS=-4.5V
Super high density cell design for extremely low RDS(ON)
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
Load Switch
DSC
PIN
CONFIGURATION
(SOT-23)
Top View
Absolute Maximum Ratings
(TA=25℃ Unless Otherwise Noted)
e * The device mounted on 1in
2 FR4 board with 2 oz copper
e Ordering Information: ME2303 (Pb-free)
ME2303-G (Green product)


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