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KGF65A4H Datasheet(PDF) 3 Page - Sanken electric |
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KGF65A4H Datasheet(HTML) 3 Page - Sanken electric |
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3 / 15 page  KGF65A4H, MGF65A4H, FGF65A4H xGF65A4H-DSE Rev.1.4 SANKEN ELCTRIC CO., LTD. 3 Oct. 12, 2016 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2016 Electrical Characteristics Unless otherwise specified, TA = 25 °C Parameter Symbol Conditions Min. Typ. Max. Unit Collector to Emitter Breakdown Voltage V(BR)CES IC = 100 μA, VGE = 0 V 650 — — V Collector to Emitter Leakage Current ICES VCE = 650 V, VGE = 0 V — — 100 µA Gate to Emitter Leakage Current IGES VGE = ±30 V — — ±500 nA Gate Threshold Voltage VGE(TH) VCE = 10 V, IC = 1 mA 4.0 5.5 7.0 V Collector to Emitter Saturation Voltage VCE(sat) VGE = 15 V, IC = 40 A — 1.9 2.37 V Input Capacitance Cies VCE = 20 V, VGE = 0 V, f = 1.0 MHz — 2300 — pF Output Capacitance Coes — 250 — Reverse Transfer Capacitance Cres — 110 — Gate Charge Qg VCE = 520 V, IC = 40 A, VGE = 15 V — 75 — nC Turn-on Delay Time td(on) TJ = 25 °C, see Figure 1. — 40 — ns Rise Time tr — 40 — Turn-off Delay Time td(off) — 100 — Fall Time tf — 40 — Turn-on Energy (3) Eon — 0.7 — mJ Turn-off Energy Eoff — 0.6 — Turn-on Delay Time td(on) TJ = 175 °C, see Figure 1. — 40 — ns Rise Time tr — 40 — Turn-off Delay Time td(off) — 130 — Fall Time tf — 60 — Turn-on Energy (3) Eon — 1.3 — mJ Turn-off Energy Eoff — 0.9 — Emitter to Collector Diode Forward Voltage VF IF = 30 A — 1.8 — V Emitter to Collector Diode Reverse Recovery Time trr IF = 30 A, di/dt = 700 A/μs — 50 — ns (3) Energy losses include the reverse recovery of diode. |
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