CJD4435 datasheet(1/4 Pages) JIANGSU

Part #	CJD4435

Description	P-Channel 30-V(D-S) MOSFET

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-251-3L Plastic-Encapsulate MOSFETS

CJD4435 P-Channel 30-V(D-S) MOSFET

FEATURE

TrenchFET Power MOSFET

APPLICATIONS

Load Switch

Battery Switch

Maximum ratings ( Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDS

-30

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

ID

-9.1

A

Power Dissipation

(note 1, Ta=25

℃)

1

Maximum Power Dissipation

(note 2, Tc=25

℃)

PD

15

W

Thermal Resistance from Junction to Ambient (t≤10S)RθJA

125

℃/W

Operating Junction Temperature

TJ

150

Storage Temperature

Tstg

-55 ~+150

℃

.

TO-251-3L

1. GATE

2. DRAIN

3. SOURCE

www.cj-elec.com

1

D,Apr,2016

MARKING

EQUIVALENT CIRCUIT

V(BR)DSS

RDS(on)MAX

ID

-30 9

24P #-9

-9.1$

35P #-9

CJD4435= Device code

Solid dot = Green molding compound device,

XXX

if none, the normal device

=Date Code

1

3

2

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CJD4435 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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