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CJD4435 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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CJD4435 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
1 / 4 page JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate MOSFETS CJD4435 P-Channel 30-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATIONS Load Switch Battery Switch Maximum ratings ( Ta=25 ℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -9.1 A Power Dissipation (note 1, Ta=25 ℃) 1 Maximum Power Dissipation (note 2, Tc=25 ℃) PD 15 W Thermal Resistance from Junction to Ambient (t≤10S)RθJA 125 ℃/W Operating Junction Temperature TJ 150 Storage Temperature Tstg -55 ~+150 ℃ . TO-251-3L 1. GATE 2. DRAIN 3. SOURCE www.cj-elec.com 1 D,Apr,2016 MARKING EQUIVALENT CIRCUIT V(BR)DSS RDS(on)MAX ID -30 9 24P #-9 -9.1$ 35P #-9 CJD4435= Device code Solid dot = Green molding compound device, XXX if none, the normal device =Date Code 1 3 2 |
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