10-FY12B2A040MR-L387L68

datasheet

13 Jul. 2016 / Revision 1

10

Copyright Vincotech

Boost Switching Characteristics

figure 5.

MOSFET

figure 6.

MOSFET

Typical swit ching t imes as a f unct ion of drain current

Typical swit ching t imes as a f unct ion of gate resistor

With an induc tive load at

With an inductive load at

125

°C

125

°C

700

V

700

V

+16/0

V

+16/0

V

4

Ω

32

A

4

Ω

figure 7.

FWD

figure 8.

FWD

Typical reverse recovery t ime as a f unction of drain current

Typical reverse recovery t ime as a f unct ion of MOSFET turn on gat e resist or

At

700

V

25

°C

At

700

V

25

°C

+16/0

V

125 °C

+16/0

V

125 °C

4

Ω

32

A

0,001

0,01

0,1

1

0

8

16

24

32

40

48

56

64

(A

(A

(A ))))

0,001

0,01

0,1

1

0

2

4

6

8

10

12

14

16

18

R

R

R

Ω)

Ω)

Ω)

0

0,002

0,004

0,006

0,008

0,01

0

2

4

6

8

10

12

14

16

18

R

R

R

g on

g on

(((Ω)

Ω)

Ω)

Ω)

0

0,003

0,006

0,009

0,012

0

8

16

24

32

40

48

56

64

(A)

(A)

(A)