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15N10

100V N-Channel Power MOSFET

May.2015-REV.00

www.dyelec.com

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

100

-

-

V

Gate Threshold Voltage

1.0

-

2.5

V

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current

-

-

1.0

uA

-

-

110

Static Drain-Source On-Resistance

2

-

-

120

mΩ

Total Gate Charge

2

26.2

Gate-Source Charge

4.6

Gate-Drain (“Miller”) Change

5.1

nC

Turn-on Delay Time

2

-

4.2

-

Rise Time

-

8.2

-

Turn-off Delay Time

-

35.6

-

Fall Time

-

9.6

-

ns

Input Capacitance

-

1535

-

Output Capacitance

-

60

-

Reverse Transfer Capacitance

-

37

-

pF

f=1.0MHz

Gate Resistance

-

2

-

Ω

f=1.0MHz

Guaranteed Avalanche Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Single Pulse Avalanche Energy

5

EAS

1.25

-

-

mJ

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Continuous Source Current

1,6

-

-

15

A

Pulsed Source Current

2,6

-

-

24

A

Forward On Voltage

2

-

-

1.2

V

Reverse Recovery Time

-

37

-

ns

Reverse Recovery Charge

-

27.3

-

nC

Notes:

1. The data tested by surface mounted on a 1 inch

2. The data tested by pulsed, pulse width ≦ 300us, duty cycle ≦ 2%.

3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=11A.

4. The power dissipation is limited by 150℃ junction temperature.

5. The Min. value is 100% EAS tested guarantee.

6. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.