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DMD15N10-TR Datasheet(PDF) 2 Page - DIYI Electronic Technology Co., Ltd. |
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DMD15N10-TR Datasheet(HTML) 2 Page - DIYI Electronic Technology Co., Ltd. |
2 / 8 page 2 / 8 15N10 100V N-Channel Power MOSFET May.2015-REV.00 www.dyelec.com ELECTRICAL CHARACTERISTICS (Tj = 25℃ unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 100 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 1.0 - 2.5 V VDS= VGS , ID=250uA Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±20V Drain-Source Leakage Current IDSS - - 1.0 uA VDS=80V, VGS=0 - - 110 VGS=10V, ID=8A Static Drain-Source On-Resistance 2 RDS(ON) - - 120 mΩ VGS=4.5V, ID=8A Total Gate Charge 2 Qg 26.2 Gate-Source Charge Qgs 4.6 Gate-Drain (“Miller”) Change Qgd 5.1 nC ID=10A VDS=80V VGS=10V Turn-on Delay Time 2 Td(on) - 4.2 - Rise Time Tr - 8.2 - Turn-off Delay Time Td(off) - 35.6 - Fall Time Tf - 9.6 - ns VDS=50V ID=10A VGS=10V RG=3.3Ω Input Capacitance Ciss - 1535 - Output Capacitance Coss - 60 - Reverse Transfer Capacitance Crss - 37 - pF VGS=0V VDS=15V f=1.0MHz Gate Resistance Rg - 2 - Ω f=1.0MHz Guaranteed Avalanche Characteristics Parameter Symbol Min. Typ. Max. Unit Test Conditions Single Pulse Avalanche Energy 5 EAS 1.25 - - mJ VDD=25V, L=0.1mH, IAS=5A Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Continuous Source Current 1,6 IS - - 15 A Pulsed Source Current 2,6 ISM - - 24 A VG=VD=0V, Force Current Forward On Voltage 2 VSD - - 1.2 V VGS=0V, IS=8A , TJ=25℃ Reverse Recovery Time trr - 37 - ns Reverse Recovery Charge Qrr - 27.3 - nC IF=10A, dI/dt=100A/µs, TJ=25℃ Notes: 1. The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper, ≦10sec, 125℃/W at steady state. 2. The data tested by pulsed, pulse width ≦ 300us, duty cycle ≦ 2%. 3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=11A. 4. The power dissipation is limited by 150℃ junction temperature. 5. The Min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. |
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