8N60

1 / 9

May.2015-REV.00

www.dyelec.com

1. Gate

2. Drain

3. Source

Pin Definition:

PRODUCT SUMMARY

600

8

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600V N-Channel Power MOSFET

RDS(ON)<1.2Ω @ VGS=10V

Fast switching capability

Low gate charge

Lead free in compliance with EU RoHS directive.

Green molding compound

Block Diagram

Ordering Information

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Case: TO-220,ITO-220,TO-262,TO-263 Package

D

G

S

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

8

A

Continuous Drain Current

8

A

Pulsed Drain Current (Note 2)

32

A

Avalanche Energy

Single Pulsed (Note 3)

230

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

ns

Power Dissipation

TO-220/TO-262/TO-263

142

W

ITO-220

48

W

Junction Temperature

+150

°C

Operating Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

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Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Part No.

Package

Packing

DMT8N60-TU

TO-220

50pcs / Tube

DMF8N60-TU

ITO-220

50pcs / Tube

DMK8N60-TU

TO-262

50pcs / Tube

DMG8N60-TU

TO-263

50pcs / Tube

DMG8N60-TR

TO-263

800pcs / 13" Reel