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DMG7N60-TU Datasheet(PDF) 2 Page - DIYI Electronic Technology Co., Ltd. |
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DMG7N60-TU Datasheet(HTML) 2 Page - DIYI Electronic Technology Co., Ltd. |
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2 / 9 page  2 / 9 THERMAL DATA 7N60 600V N-Channel Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220/ITO-220 TO-262/TO-263 θJA 62.5 °C/W TO-251/ TO-252 160 Junction to Case TO-220/TO-262/TO-263 θJC 1.25 °C/W ITO-220 3.5 TO-251/ TO-252 2.5 PARAMETER SYMBOL TEST CONDITIONS TYP MIN MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS GS V = 0V, ID = 250μA 600 V Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 1 μA Gate-Source Leakage Current Forward IGSS VGS = 30V, VDS = 0V 100 nA Reverse e VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C 0.67 V/°С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) DS V = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) 0.83 1.0 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz 1200 1400 pF Output Capacitance COSS pF 125 155 Reverse Transfer Capacitance CRSS pF 40 50 SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 65 95 ns Turn-On Rise Time tR ns 180 210 Turn-Off Delay Time tD(OFF) ns 320 360 Turn-Off Fall Time tF 260 ns Total Gate Charge QG VDS= 480V,ID= 7A, VGS= 10V (Note 1, 2) 210 230 nC Gate-Source Charge QGS nC 11 Gate-Drain Charge QGD nC 38 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 7 A Maximum Pulsed Drain-Source Diode Forward Current ISM 25 A Reverse Recovery Time trr VGS = 0 V, IS = 7A, dIF/dt = 100 A/ μs (Note 1) 320 ns Reverse Recovery Charge QRR μC 2.4 Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2.. Essentially independent of operating temperature Mar.2015-REV.00 www.dyelec.com 220 VDD = 300V, ID =7A, RG = 25Ω (Note 1, 2) VGS=0V,IS=7A GS V = 10V, ID = 3.7A |
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