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DMG2N65-TR Datasheet(PDF) 2 Page - DIYI Electronic Technology Co., Ltd. |
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DMG2N65-TR Datasheet(HTML) 2 Page - DIYI Electronic Technology Co., Ltd. |
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2 / 9 page  2 / 9 2N65 650V N-Channel Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS TYP MIN MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS GS V = 0V, ID = 250μA 650 V Drain-Source Leakage Current IDSS VDS = 650V, VGS = 0V 10 μA Gate-Source Leakage Current Forward IGSS VGS = 30V, VDS = 0V 100 nA Reverse e -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) DS V = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) 4 4.4 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz pF Output Capacitance COSS pF Reverse Transfer Capacitance CRSS pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 10 - ns Turn-On Rise Time tR ns 25 - Turn-Off Delay Time tD(OFF) ns 20 - Turn-Off Fall Time tF - ns Total Gate Charge QG VDS= 480V,ID= 2.4A, VGS= 10V (Note 1, 2) 5.7 - nC Gate-Source Charge QGS nC 1.8 Gate-Drain Charge QGD nC 2 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 2.0 A Maximum Pulsed Drain-Source Diode Forward Current ISM 8.0 A Reverse Recovery Time trr VGS = 0 V, IS = 2A, dIF/dt = 100 A/μs (Note 1) 357 ns Reverse Recovery Charge QRR μC 2 Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2.. Essentially independent of operating temperature May,2015-REV.00 www.dyelec.com VGS = -30V, VDS = 0V GS V = 10V, ID =1A 300 45 2 - - - VDD =300V, ID =2A, RG=25Ω (Note 1, 2) 25 GS V = 0 V, ISD = 2.0 A - - THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220/ITO-220 TO-262/TO-263 θJA 62.5 °C/W TO-251/ TO-252 110 Junction to Case θJC 2.35 °C/W ITO-220 5.5 TO-251/ TO-252 2.9 TO-220/ITO-220 TO-262/TO-263 |
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