IPB026N06N datasheet(6/9 Pages) INFINEON

Part #	IPB026N06N

Description	OptiMOSTM Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPB026N06N

9 Drain-source on-state resistance

10 Typ. gate threshold voltage

R DS(on)=f(T j); I D=100 A; V GS=10 V

V GS(th)=f(T j); V GS=V DS

11 Typ. capacitances

12 Forward characteristics of reverse diode

C =f(V DS); V GS=0 V; f =1 MHz

I F=f(V SD)

parameter: T j

typ

max

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

-60

-20

20

60

100

140

180

T

j [°C]

75 µA

750 µA

0

1

2

3

4

5

-60

-20

20

60

100

140

180

T

j [°C]

Ciss

Coss

Crss

101

102

103

104

10

100

1000

10000

0

20

40

60

V

DS [V]

25 °C

175 °C

100

101

102

103

0

0.5

1

1.5

2

V

SD [V]

Rev.2.2

page 6

2012-12-20

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