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IPD025N06N Datasheet(PDF) 9 Page - Infineon Technologies AG

Part # IPD025N06N
Description  Metal Oxide Semiconductor Field Effect Transistor
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPD025N06N Datasheet(HTML) 9 Page - Infineon Technologies AG

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9
OptiMOSTMPower-Transistor,60V
IPD025N06N
Rev.2.5,2014-07-23
Final Data Sheet
Diagram9:Drain-sourceon-stateresistance
Tj[°C]
-60
-20
20
60
100
140
180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
max
typ
RDS(on)=f(Tj);ID=90A;VGS=10V
Diagram10:Typ.gatethresholdvoltage
Tj[°C]
-60
-20
20
60
100
140
180
0
1
2
3
4
5
950 µA
95 µA
VGS(th)=f(Tj);VGS=VDS
Diagram11:Typ.capacitances
VDS[V]
0
20
40
60
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram12:Forwardcharacteristicsofreversediode
VSD[V]
0.0
0.5
1.0
1.5
2.0
100
101
102
103
25 °C
175 °C
IF=f(VSD);parameter:Tj


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