Electronic Components Datasheet Search |
|
BD8229EFV-E2 Datasheet(PDF) 10 Page - Rohm |
|
BD8229EFV-E2 Datasheet(HTML) 10 Page - Rohm |
10 / 17 page BD8229EFV 10/13 TSZ02201-0H5H0BK01510-1-2 © 2015 ROHM Co., Ltd. All rights reserved. 04.Nov.2015 Rev.001 www.rohm.com TSZ22111・15・001 Operational Notes – continued 12. Regarding the Input Pin of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a parasitic diode or transistor. For example (refer to figure below): When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided. Figure 2. Example of monolithic IC structure 13. Area of Safe Operation (ASO) Operate the IC such that the output voltage, output current, and power dissipation are all within the Area of Safe Operation (ASO). 14. Thermal Shutdown Circuit(TSD) This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below the TSD threshold, the circuits are automatically restored to normal operation. Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat damage. 15. Capacitor Between Output and Ground If a large capacitor is connected between the output pin and ground pin, current from the charged capacitor can flow into the output pin and may destroy the IC when the VCC or IN pin is shorted to ground or pulled down to 0V. Use a capacitor smaller than 0.1 μF between output and ground. TSD ON temperature [°C] (typ) Hysteresis temperature [°C] (typ) 175 25 N N P + P N N P + P Substrate GND N P + N N P + N P P Substrate GND GND Parasitic Elements Pin A Pin A Pin B Pin B B C E Parasitic Elements GND Parasitic Elements C B E Transistor (NPN) Resistor N Region close-by Parasitic Elements |
Similar Part No. - BD8229EFV-E2 |
|
Similar Description - BD8229EFV-E2 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |