Electronic Components Datasheet Search |
|
AOE6932 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
|
AOE6932 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
1 / 2 page Tel: 408.830.9742 • Fax: 408.830.9757 •www.aosmd.com 1 Alpha and Omega Semiconductor 475 Oakmead Parkway, Sunnyvale, California 94085 USA FOR IMMEDIATE RELEASE Media Contact: Mina Galvan Tel: 408.789.3233 Email: mina.galvan@aosmd.com Alpha and Omega Semiconductor Expands Its New PairFET™ Family New PairFET TM series sets new industry standard with improved thermals and higher efficiency SUNNYVALE, Calif., Sep. 14, 2016 – Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a designer, developer and global supplier of a broad range of power semiconductors and power ICs, today introduced two new products based on its high efficiency XS-PairFET package and latest low voltage technology. The AOE6932 and AOE6936 are the newest extensions to the flagship device, AOE6930, that was released in 2015. Both products are newly optimized for enhanced driving and switching performance. AOE6932 improves gate driving performance and reduces power loss at relatively low output current. AOE6936 features a 20V gate voltage tolerance with much smaller parasitic capacitances. Both devices offer the same 8mohm (max) Rdson (@4.5V gate driving voltage) on the high side, but present different Rdson values for the low side FET. AOE6932 is designed with a 1.8mohm (max) @ 4.5Vgs low side FET, while AOE6936 is designed with a 3mohm (max) low side FET. Application tests show that these distinct configurations uniquely optimize each device to achieve the best efficiency and address specific application requirements, such as the input-output voltage headroom, and current per phase for the Vcore power supply. “Our first product packaged in a PairFET with a bottom-sourced low-side FET was released last year, and the AOE6930 is now widely accepted by leading customers in notebook PC, desktop PC, and high-end VGA designs. The benefits offered by this structure are significant. With direct thermal dissipation from the low side source down to the copper layer of the PCB, the temperature rise can be well controlled in the power device. With the newly released AOE6932 and AOE6936, we offer wide coverage of various application conditions, with optimal cost effectiveness. This product family is setting a new industry standard for high power density circuit design in all POL applications,” said Lei Feng, Sr. Marketing Director of MOSFET product line at AOS. Device Specification Table Part Number Package VDS (V) VGS (±V) RDS(ON) (mΩ max)* at VGS= VGS(th) (max V) Ciss (pF) Coss (pF) Crss (pF) Qg* (nC) Qgd (nC) 10V 4.5V AOE6932 High Side 30 20 5 8 2.2 1150 380 55 7.5 3 Low Side 30 12 1.4 1.8 1.9 4180 880 125 30 7 AOE6936 High Side 30 20 5 8 2.2 1150 380 55 7.5 3 Low Side 30 20 2 3 2.1 2270 650 90 15 4.5 AOE6930 (reference) High Side 30 20 4.3 7 2.1 1075 480 55 7 2.5 Low Side 30 12 0.83 1.05 1.9 5560 1670 200 42 12 |
Similar Part No. - AOE6932 |
|
Similar Description - AOE6932 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |