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FF1200R17KP4_B2 Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # FF1200R17KP4_B2
Description  IHM-A Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 3 Diode
Download  10 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

FF1200R17KP4_B2 Datasheet(HTML) 7 Page - Infineon Technologies AG

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TechnischeInformation/TechnicalInformation
FF1200R17KP4_B2
IGBT-Modul
IGBT-Module
preparedby:WB
approvedby:IB
dateofpublication:2016-03-09
revision:V3.1
DurchlasskennliniederDiode,Wechselrichter(typisch)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
VF [V]
0,0
0,5
1,0
1,5
2,0
2,5
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
SchaltverlusteDiode,Wechselrichter(typisch)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=0.68
Ω,VCE=900V
IF [A]
0
400
800
1200
1600
2000
2400
0
50
100
150
200
250
300
350
400
450
500
Erec, Tvj = 125°C
Erec, Tvj = 150°C
SchaltverlusteDiode,Wechselrichter(typisch)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=1200A,VCE=900V
RG [
Ω]
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0
150
175
200
225
250
275
300
325
350
375
400
425
450
Erec, Tvj = 125°C
Erec, Tvj = 150°C
TransienterWärmewiderstandDiode,Wechselrichter
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
t [s]
0,001
0,01
0,1
1
10
1
10
100
ZthJC : Diode
i:
ri[K/kW]:
τi[s]:
1
5,561
0,002
2
18,42
0,051
3
5,837
0,441
4
1,712
7,373


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