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FF1200R17KP4_B2 Datasheet(PDF) 7 Page - Infineon Technologies AG |
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FF1200R17KP4_B2 Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 10 page 7 TechnischeInformation/TechnicalInformation FF1200R17KP4_B2 IGBT-Modul IGBT-Module preparedby:WB approvedby:IB dateofpublication:2016-03-09 revision:V3.1 DurchlasskennliniederDiode,Wechselrichter(typisch) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) VF [V] 0,0 0,5 1,0 1,5 2,0 2,5 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 Tvj = 25°C Tvj = 125°C Tvj = 150°C SchaltverlusteDiode,Wechselrichter(typisch) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=0.68 Ω,VCE=900V IF [A] 0 400 800 1200 1600 2000 2400 0 50 100 150 200 250 300 350 400 450 500 Erec, Tvj = 125°C Erec, Tvj = 150°C SchaltverlusteDiode,Wechselrichter(typisch) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=1200A,VCE=900V RG [ Ω] 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 150 175 200 225 250 275 300 325 350 375 400 425 450 Erec, Tvj = 125°C Erec, Tvj = 150°C TransienterWärmewiderstandDiode,Wechselrichter transientthermalimpedanceDiode,Inverter ZthJC=f(t) t [s] 0,001 0,01 0,1 1 10 1 10 100 ZthJC : Diode i: ri[K/kW]: τi[s]: 1 5,561 0,002 2 18,42 0,051 3 5,837 0,441 4 1,712 7,373 |
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