EM63B165TS-6ISG datasheet(1/53 Pages) ETRON

Part #	EM63B165TS-6ISG

Description	32M x 16 bit Synchronous DRAM (SDRAM)

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Manufacturer	ETRON [Etron Technology, Inc.]

Direct Link	http://www.etron.com

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EtronTech

EM63B165TS

Etron Technology, Inc.

No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.

TEL: (886)-3-5782345

FAX: (886)-3-5778671

Etron Technology, Inc. reserves the right to change products or specification without notice.

32M x 16 bit Synchronous DRAM (SDRAM)

Advance (Rev. 2.0, Jun. /2016)

Features

 Fast access time from clock: 4.5/5/5.4 ns

 Fast clock rate: 200/166/143 MHz

 Fully synchronous operation

 Internal pipelined architecture

 8M word x 16-bit x 4-bank

 Programmable Mode registers

- CAS Latency: 2 or 3

- Burst Length: 1, 2, 4, 8, or full page

- Burst Type: Sequential or Interleaved

- Burst stop function

 Auto Refresh and Self Refresh

 8192 refresh cycles/64ms

 CKE power down mode

 Single +3.3V ±0.3V power supply

 Industrial Temperature: TA = -40~85°C

 Interface: LVTTL

 54-pin 400 mil plastic TSOP II package

- Pb free and Halogen free

Table 1. Key Specifications

Table 2. Ordering Information

Overview

The EM63B165 SDRAM is a high-speed CMOS

synchronous DRAM containing 512 Mbits. It is

internally configured as 4 Banks of 8M word x 16

DRAM with a synchronous interface (all signals

are registered on the positive edge of the clock

signal, CLK). Read and write accesses to the SDRAM

are burst oriented; accesses start at a selected

location and continue for a programmed number of

locations in a programmed sequence. Accesses

begin with the registration of a Bank Activate command

which is then followed by a Read or Write command.

The EM63B165 provides for programmable Read

or Write burst lengths of 1, 2, 4, 8, or full page, with

a burst termination option. An auto precharge function

may be enabled to provide a self-timed row precharge

that is initiated at the end of the burst sequence.

The refresh functions, either Auto or Self Refresh

are easy to use. By having a programmable mode

register, the system can choose the most suitable

modes to maximize its performance. These devices

are well suited for applications requiring high memory

bandwidth and particularly well suited to high

performance PC applications.

EM63B165

-5I/6I/7I

tCK3

Clock Cycle time(min.)

5/6/7

ns

tAC3

Access time from CLK (max.)

4.5/5/5.4

ns

tRAS

Row Active time(min.)

40/42/42

ns

tRC

Row Cycle time(min.)

55/60/63

ns

Part Number

Frequency

Package

EM63B165TS-5ISG

200MHz

TSOP II

EM63B165TS-6ISG

166MHz

TSOP II

EM63B165TS-7ISG

143MHz

TSOP II

TS: indicates TSOPII Package

I: indicates Industrial Grade

S: indicates Stacked Dice

G: indicates Pb and Halogen Free

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Etron Technology, Inc.	EM63B165TS-6SG	1Mb / 53P	32M x 16 bit Synchronous DRAM (SDRAM)

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