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IPP65R660CFDA Datasheet(PDF) 6 Page - Infineon Technologies AG |
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IPP65R660CFDA Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 15 page 6 650VCoolMOS™CFDAPowerTransistor IPB65R660CFDA,IPP65R660CFDA Rev.2.1,2014-11-19 Final Data Sheet 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table5Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage 1) V(BR)DSS 650 V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 3.5 4 4.5 V VDS=VGS,ID=0.2mA Zero gate voltage drain current IDSS 1 µA VDS=650V,VGS=0V,Tj=25°C 100 VDS=650V,VGS=0V,Tj=150°C Gate-source leakage current IGSS 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.594 0.66 Ω VGS=10V,ID=3.2A,Tj=25°C 1.544 VGS=10V,ID=3.2A,Tj=150°C Gate resistance RG 6.5 Ω f=1MHz,opendrain Table6Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss 543 pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss 32 pF Effective output capacitance, energy related 2) Co(er) 24 pF VGS=0V,VDS=0...400V Effective output capacitance, time related 3) Co(tr) 97 pF ID=constant,VGS=0V, VDS=0...400V Turn-on delay time td(on) 9 ns VDD=400V,VGS=13V,ID=3.2A, RG=6.8 Ω (see table 10) Rise time tr 8 ns Turn-off delay time td(off) 40 ns Fall time tf 10 ns Table7Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs 3.5 nC VDD=480V,ID=3.2A, VGS=0to10V Gate to drain charge Qgd 11 nC Gate charge total Qg 20 nC Gate plateau voltage Vplateau 6.4 V 1) For applications with applied blocking voltage > 65% of the specified blocking voltage, we recommend to evaluate the impact of the cosmic radiation effect in early design phase. For assessment please contact local Infineon sales office. 2) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400V 3) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400V |
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