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IRF1407STRLPbF Datasheet(PDF) 2 Page - Infineon Technologies AG |
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IRF1407STRLPbF Datasheet(HTML) 2 Page - Infineon Technologies AG |
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2 / 12 page  IRF1407S/LPbF 2 2016-5-26 Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) starting TJ = 25°C, L = 0.13mH, RG = 25, IAS = 78A, VGS =10V. (See fig. 12) ISD 78A, di/dt 320A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. Uses IRF1407 data and test conditions. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.0078 VGS = 10V, ID = 78A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Trans conductance 74 ––– ––– S VDS = 25V, ID = 78A IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS =75 V, VGS = 0V ––– ––– 250 VDS = 60V,VGS = 0V,TJ =150°C IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V Gate-to-Source Reverse Leakage ––– -200 VGS = -20V Qg Total Gate Charge ––– 160 250 nC ID = 78A Qgs Gate-to-Source Charge ––– 35 52 VDS = 60V Qgd Gate-to-Drain Charge ––– 54 81 VGS = 10V td(on) Turn-On Delay Time ––– 11 ––– ns VDD = 38V tr Rise Time ––– 150 ––– ID =78A td(off) Turn-Off Delay Time ––– 150 ––– RG= 2.5 tf Fall Time ––– 140 ––– VGS = 10V LD Internal Drain Inductance ––– 4.5 ––– nH Between lead, 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 5600 ––– pF VGS = 0V Coss Output Capacitance ––– 890 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 190 ––– ƒ = 1.0kHz, See Fig. 5 Coss Output Capacitance ––– 5800 ––– VGS = 0V, VDS = 1.0V ƒ = 1.0kHz Coss Output Capacitance ––– 560 ––– VGS = 0V, VDS = 60V ƒ = 1.0kHz Coss eff. Effective Output Capacitance ––– 1100 ––– VGS = 0V, VDS = 0V to 60V Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 100 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 520 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 78A,VGS = 0V trr Reverse Recovery Time ––– 110 170 ns TJ = 25°C ,IF = 78A Qrr Reverse Recovery Charge ––– 390 590 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) |
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