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SIGC32T120R3LE Datasheet(PDF) 3 Page - Infineon Technologies AG

Part # SIGC32T120R3LE
Description  TRENCHSTOPTM IGBT3 Chip
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SIGC32T120R3LE Datasheet(HTML) 3 Page - Infineon Technologies AG

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SIGC32T120R3LE
L7641N, L7641U, L7641F
3
Rev. 2.3, 19.08.2015
TRENCHSTOP
TM IGBT3 Chip
Features:
1200V trench & field stop technology
Low turn-off losses
Short tail current
Positive temperature coefficient
Easy paralleling
Recommended for:
Power modules
Applications:
Drives
Chip Type
VCE
ICn 1
Die Size
Package
SIGC32T120R3LE
1200V
25A
6.5mm x 4.87mm
Sawn on foil
Mechanical Parameters
Die size
6.5 x 4.87
mm
2
Emitter pad size
See chip drawing
Gate pad size
1.139 x 1.139
Area total
31.665
Thickness
120
µm
Wafer size
200
mm
Maximum possible chips per wafer
864
Passivation frontside
Photoimide
Pad metal
3200nm AlSiCu
Backside metal
Ni Ag
– system
To achieve a reliable solder connection it is strongly
recommended not to consume the Ni layer completely during
production process
Die bond
Electrically conductive epoxy glue and soft solder
Wire bond
Al,
≤500µm
Reject ink dot size
 0.65mm; max. 1.2mm
Storage environment
for original and
sealed MBB bags
Ambient atmosphere air, temperature 17°C
– 25°C,
<6 months
for open MBB bags
Acc. to IEC62258-3: atmosphere >99% Nitrogen or inert gas,
humidity <25%RH, temperature 17°C
– 25°C, <6 months
1 Nominal collector current at TC=100°C for chip packaged in TO packages, see application example cited on page 5.


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