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SIGC109T120R3LE Datasheet(PDF) 7 Page - Infineon Technologies AG |
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SIGC109T120R3LE Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 9 page SIGC109T120R3LE L7688N, L7688U, L7688F 7 Rev. 2.3, 19.08.2015 Bare Die Product Specifics Test coverage at wafer level cannot cover all application conditions. Therefore it is recommended to test all characteristics which are relevant for the application at package level, including RBSOA and SCSOA. Description AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Revision Subjects (major changes since last revision) Date 2.0 Release of final datasheet, change wafer size to 200mm 30.04.2010 2.1 Additional basic types L7688N, L7688U, L7688F; new gate pad design 01.07.2014 2.2 Minor changes, chip drawing 06.02.2015 2.3 Update disclaimer 19.08.2015 Relevant Application Notes |
Similar Part No. - SIGC109T120R3LE_15 |
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Similar Description - SIGC109T120R3LE_15 |
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