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CJ3400 Datasheet(PDF) 2 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

Part # CJ3400
Description  N-Channel Enhancement Mode Field Effect Transistor
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Manufacturer  JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]
Direct Link  http://www.cj-elec.com/en/
Logo JIANGSU - Jiangsu Changjiang Electronics Technology Co., Ltd

CJ3400 Datasheet(HTML) 2 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Off Characteristics
Drain-source breakdown voltage
V(BR) DSS
VGS = 0V, ID =250µA
30
V
Zero gate voltage drain current
IDSS
VDS =24V,VGS = 0V
1
µA
Gate-source leakage current
IGSS
VGS =±12V, VDS = 0V
±100
nA
On characteristics
VGS =10V, ID =5.8A
35
mΩ
VGS =4.5V, ID =5A
40
mΩ
Drain-source on-resistance
(note 3)
RDS(on)
VGS =2.5V,ID=4A
52
mΩ
Forward tranconductance
gFS
VDS =5V, ID =5A
8
S
Gate threshold voltage
VGS(th)
VDS =VGS, ID =250µA
0.7
1.4
V
Dynamic Characteristics (note 4,5)
Input capacitance
Ciss
1050
pF
Output capacitance
Coss
99
pF
Reverse transfer capacitance
Crss
VDS =15V,VGS =0V,f =1MHz
77
pF
Gate resistance
Rg
VDS =0V,VGS =0V,f =1MHz
3.6
Switching Characteristics (note 4,5)
Turn-on delay time
td(on)
5
ns
Turn-on rise time
tr
7
ns
Turn-off delay time
td(off)
40
ns
Turn-off fall time
tf
VGS=10V,VDS=15V,
RL=2.7Ω,RGEN=3Ω
6
ns
Drain-source diode characteristics and maximum ratings
Diode forward voltage (note 3)
VSD
IS=1A,VGS=0V
1
V
Note :
1.
Repetitive Rating : Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t < 5 sec.
3.
Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.
4.
Guaranteed by design, not subject to production testing.
MOSFET ELECTRICAL CHARACTERISTICS
a
T =25
℃ unless otherwise specified
www.cj-elec.com
2
C,Apr,2015


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