ADS890xB datasheet(6/76 Pages) TI1

Part #	ADS890xB

Description	20-Bit, High-Speed SAR ADCs With Integrated Reference Buffer, Integrated LDO, and multiSPI Digital Interface

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ADS8900B, ADS8902B, ADS8904B

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Product Folder Links: ADS8900B ADS8902B ADS8904B

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(1)

See the REF_MRG Register.

(2)

While operating with internal reference buffer and LDO.

(3)

See for statistical distribution data for DNL, INL, offset, and gain error parameters.

(4)

LSB = least-significant bit. 1 LSB at 20-bit resolution is approximately 0.95 ppm.

(5)

For selected VREF, see the OFST_CAL Register.

(6)

Includes internal reference buffer errors and drifts.

6.5 Electrical Characteristics

At RVDD = 5.5 V, DVDD = 1.65 V to 3.6 V, VREF = 5 V, and maximum throughput (unless otherwise noted).

Minimum and maximum values at TA = –40°C to +125°C; typical values at TA = 25°C.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

ANALOG INPUT

FSR

Full-scale input range

(AINP – AINM)

–VREF

VREF

V

VIN

Absolute input voltage

(AINP and AINM to REFM)

0

VREF

V

VCM

Common-mode voltage

(AINP + AINM) / 2

(VREF / 2) –

0.1

VREF / 2

(VREF / 2) +

0.1

V

CIN

Input capacitance

Sample mode

60

pF

Hold mode

4

pF

VOLTAGE REFERENCE INPUT (REFIN)

IREF

Reference input current

VREF = 5 V

0.1

1

µA

CREF

Internal capacitance

10

pF

REFERENCE BUFFER OUTPUT (REFBUFOUT)

V(RO)

Reference buffer offset voltage

(VREFBUFOUT – VREF)

With EN_MARG = 0b(1)

–250

250

µV

CREFBUF

External ceramic decoupling

capacitor

10

22

µF

RESR

External series resistor

0

1

1.3

Ω

ISHRT

Short-circuit current

30

mA

Margining range

With EN_MARG = 1b(1)

±4.5

mV

Margining resolution

With EN_MARG = 1b(1)

280

µV

DC ACCURACY(2) (CREFBUF = 22 µF, RESR = 1 Ω)

Resolution

20

Bits

NMC

No missing codes

20

Bits

INL

Integral nonlinearity(3)

TA = 0°C to +60°C

-2

±1

2

ppm(4)

TA = –40°C to +85°C

-2.75

±1

2.75

TA = –40°C to +125°C

-3.75

±1

3.75

DNL

Differential nonlinearity(3)

-0.5

±0.2

0.5

ppm(4)

E(IO)

Input offset error(3)

TA = 25°C

(5)

-11.5

±3

11.5

ppm(4)

TA = –40°C to +125°C

(5)

-60

±10

60

dVOS/dT

Input offset thermal drift(5)

10

μV/°C

GE

Gain error(3)

EN_MARG = 0b(1)(6)

-0.03

±0.005

0.03

%FSR

dGE/dT

Gain error thermal drift

EN_MARG = 0b(1)(6)

3.6

ppm/°C

TNS

Transition noise

2.3

ppm(4)

First output code deviation for

burst-mode data acquisition

See Reference Buffer Module

–3

3

TNS

CMRR

Common-mode rejection ratio

dc to 20 kHz

80

dB

SAMPLING DYNAMICS

Aperture delay

4

ns

tj-rms

Aperture jitter

2

ps RMS

f3-DB(small)

Small-signal bandwidth

23

MHz

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