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ADS890xB Datasheet(PDF) 6 Page - Texas Instruments |
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ADS890xB Datasheet(HTML) 6 Page - Texas Instruments |
6 / 76 page 6 ADS8900B, ADS8902B, ADS8904B SBAS728 – NOVEMBER 2016 www.ti.com Product Folder Links: ADS8900B ADS8902B ADS8904B Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated (1) See the REF_MRG Register. (2) While operating with internal reference buffer and LDO. (3) See for statistical distribution data for DNL, INL, offset, and gain error parameters. (4) LSB = least-significant bit. 1 LSB at 20-bit resolution is approximately 0.95 ppm. (5) For selected VREF, see the OFST_CAL Register. (6) Includes internal reference buffer errors and drifts. 6.5 Electrical Characteristics At RVDD = 5.5 V, DVDD = 1.65 V to 3.6 V, VREF = 5 V, and maximum throughput (unless otherwise noted). Minimum and maximum values at TA = –40°C to +125°C; typical values at TA = 25°C. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ANALOG INPUT FSR Full-scale input range (AINP – AINM) –VREF VREF V VIN Absolute input voltage (AINP and AINM to REFM) 0 VREF V VCM Common-mode voltage (AINP + AINM) / 2 (VREF / 2) – 0.1 VREF / 2 (VREF / 2) + 0.1 V CIN Input capacitance Sample mode 60 pF Hold mode 4 pF VOLTAGE REFERENCE INPUT (REFIN) IREF Reference input current VREF = 5 V 0.1 1 µA CREF Internal capacitance 10 pF REFERENCE BUFFER OUTPUT (REFBUFOUT) V(RO) Reference buffer offset voltage (VREFBUFOUT – VREF) With EN_MARG = 0b(1) –250 250 µV CREFBUF External ceramic decoupling capacitor 10 22 µF RESR External series resistor 0 1 1.3 Ω ISHRT Short-circuit current 30 mA Margining range With EN_MARG = 1b(1) ±4.5 mV Margining resolution With EN_MARG = 1b(1) 280 µV DC ACCURACY(2) (CREFBUF = 22 µF, RESR = 1 Ω) Resolution 20 Bits NMC No missing codes 20 Bits INL Integral nonlinearity(3) TA = 0°C to +60°C -2 ±1 2 ppm(4) TA = –40°C to +85°C -2.75 ±1 2.75 TA = –40°C to +125°C -3.75 ±1 3.75 DNL Differential nonlinearity(3) -0.5 ±0.2 0.5 ppm(4) E(IO) Input offset error(3) TA = 25°C (5) -11.5 ±3 11.5 ppm(4) TA = –40°C to +125°C (5) -60 ±10 60 dVOS/dT Input offset thermal drift(5) 10 μV/°C GE Gain error(3) EN_MARG = 0b(1)(6) -0.03 ±0.005 0.03 %FSR dGE/dT Gain error thermal drift EN_MARG = 0b(1)(6) 3.6 ppm/°C TNS Transition noise 2.3 ppm(4) First output code deviation for burst-mode data acquisition See Reference Buffer Module –3 3 TNS CMRR Common-mode rejection ratio dc to 20 kHz 80 dB SAMPLING DYNAMICS Aperture delay 4 ns tj-rms Aperture jitter 2 ps RMS f3-DB(small) Small-signal bandwidth 23 MHz |
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