IPB17N25S3-100 datasheet(2/9 Pages) INFINEON

Part #	IPB17N25S3-100

Description	OptiMOS??T Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPB17N25S3-100

IPP17N25S3-100

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Thermal characteristics

1)

Thermal resistance, junction - case

R thJC

--

-

1.4

K/W

Thermal resistance, junction -

ambient, leaded

R thJA

--

-

62

SMD version, device on PCB

R thJA

minimal footprint

-

62

6 cm

2 cooling area2)

--

40

Electrical characteristics,

at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0V, I D= 1mA

250

-

V

Gate threshold voltage

V GS(th)

V DS=V GS, I D=54µA

2.0

3.0

4.0

Zero gate voltage drain current

I DSS

V DS=250V, V GS=0V

-0.01

1

µA

V DS=250V, V GS=0V,

T j=125°C

2)

-

1

100

Gate-source leakage current

I GSS

V GS=20V, V DS=0V

-

10

100

nA

Drain-source on-state resistance

R DS(on)

V GS=10V, I D=17A

-

85

100

m

Ω

Values

Rev. 1.1

page 2

2013-05-13

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IPB17N25S3-100 Datasheet(PDF) 2 Page - Infineon Technologies AG

IPB17N25S3-100 Datasheet(HTML) 2 Page - Infineon Technologies AG

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