IPP17N25S3-100 datasheet(5/9 Pages) INFINEON

Part #	IPP17N25S3-100

Description	OptiMOS??T Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPB17N25S3-100

IPP17N25S3-100

5 Typ. output characteristics

6 Typ. drain-source on-state resistance

I D = f(V DS); T j = 25 °C; SMD

R DS(on) = f(I D); T j = 25 °C; SMD

parameter: V GS

7 Typ. transfer characteristics

8 Typ. drain-source on-state resistance

I D = f(V GS); V DS = 25V

R DS(on) = f(T j); I D = 17 A; V GS = 10 V; SMD

parameter: T j

0

50

100

150

200

250

300

-60

-20

20

60

100

140

180

T

j [°C]

5 V

5.5 V

10 V

0

17

34

51

68

0

6

12

18

24

30

V

DS [V]

5V

5.5 V

10 V

0

100

200

300

400

500

0

1734

5168

I

D [A]

-55 °C

25 °C

175 °C

0

20

40

60

34

56

V

GS [V]

Rev. 1.1

page 5

2013-05-13

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IPP17N25S3-100 Datasheet(PDF) 5 Page - Infineon Technologies AG

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