IPP70N10S3L-12_12 datasheet(3/9 Pages) INFINEON

Part #	IPP70N10S3L-12

Description	OptiMOS -T Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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3 / 9 page

IPB70N10S3L-12

IPI70N10S3L-12, IPP70N10S3L-12

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Dynamic characteristics

1)

Input capacitance

C iss

-

4270

5550

pF

Output capacitance

C oss

-

950

1230

Reverse transfer capacitance

Crss

-

90

135

Turn-on delay time

t d(on)

-

10

-

ns

Rise time

t r

-

5

-

Turn-off delay time

t d(off)

-

28

-

Fall time

t f

-

5

-

Gate Charge Characteristics

1)

Gate to source charge

Q gs

-

16

21

nC

Gate to drain charge

Q gd

-

11

17

Gate charge total

Q g

-

60

80

Gate plateau voltage

V plateau

-

3.7

-

V

Reverse Diode

Diode continous forward current

1)

I S

-

70

A

Diode pulse current

1)

I S,pulse

-

280

Diode forward voltage

V SD

V GS=0 V, I F=70 A,

T j=25 °C

0.6

1

1.2

V

Reverse recovery time

1)

t rr

V R=50V, I F=I S,

di F/dt =100A/µs

-

80

-

ns

Reverse recovery charge

1)

Q rr

-

185

-

nC

1) Defined by design. Not subject to production test.

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

2) Qualified with V

GS = +20/-5V

T C=25°C

Values

V GS=0V, V DS=25V,

f =1MHz

V DD=20 V, V GS=10 V,

I D=50 A, R G=3.5 W

V DD=80 V, I D=70 A,

V GS=0 to 10 V

Rev. 1.2

page 3

2012-05-10

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IPP70N10S3L-12 Datasheet(PDF) 3 Page - Infineon Technologies AG

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