IPP084N06L3G_12 datasheet(2/11 Pages) INFINEON

Part #	IPP084N06L3G

Description	OptiMOS?? Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPB081N06L3 G IPP084N06L3 G

IPI084N06L3 G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance, junction - case

R thJC

-

1.9

K/W

Thermal resistance,

R thJA

minimal footprint

-

62

junction - ambient

6 cm² cooling area

5)

--

40

Electrical characteristics,

at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

60

-

V

Gate threshold voltage

V GS(th)

V DS=V GS, I D=34 µA

1.2

1.7

2.2

Zero gate voltage drain current

I DSS

V DS=60 V, V GS=0 V,

T j=25 °C

-

0.1

1

µA

V DS=60 V, V GS=0 V,

T j=125 °C

-

10

100

Values

Rev. 2.24

page 2

2012-11-28

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

1

100

nA

Drain-source on-state resistance

R DS(on)

V GS=10 V, I D=50 A

-

7.0

8.4

m

Ω

V GS=4.5 V, I D=25 A

-

9.7

14.3

Drain-source on-state resistance

R DS(on)

V GS=10 V, I D=50 A,

(SMD)

-

6.7

8.1

V GS=4.5 V, I D=25 A,

(SMD)

-

9.4

14

Gate resistance

R G

-

0.9

-

Ω

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=50 A

35

69

-

S

5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 2.24

page 2

2012-11-28

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IPP084N06L3G Datasheet(PDF) 2 Page - Infineon Technologies AG

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