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IPP084N06L3G Datasheet(PDF) 7 Page - Infineon Technologies AG |
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IPP084N06L3G Datasheet(HTML) 7 Page - Infineon Technologies AG |
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7 / 11 page  IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=50 A pulsed parameter: T j(start) parameter: V DD 12 V 30 V 48 V 0 2 4 6 8 10 0 1020 304050 Q gate [nC] 25 °C 100 °C 150 °C 1 10 100 0.1 1 10 100 1000 t AV [µs] Rev. 2.24 page 7 2012-11-28 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 12 V 30 V 48 V 0 2 4 6 8 10 0 1020 304050 Q gate [nC] 50 55 60 65 70 -60 -20 20 60 100 140 180 T j [°C] V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g 25 °C 100 °C 150 °C 1 10 100 0.1 1 10 100 1000 t AV [µs] Rev. 2.24 page 7 2012-11-28 |
Similar Part No. - IPP084N06L3G_12 |
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Similar Description - IPP084N06L3G_12 |
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