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BU90T82 Datasheet(PDF) 6 Page - Rohm

Part # BU90T82
Description  27bit LVDS Dual-out Transmitter
Download  29 Pages
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

BU90T82 Datasheet(HTML) 6 Page - Rohm

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Datasheet
Datasheet
6/25
TSZ02201-0L2L0H500270-1-2
© 2014 ROHM Co., Ltd. All rights reserved.
06.July.2016 Rev.003
www.rohm.com
TSZ22111 • 15 • 001
BU90T82
Absolute Maximum Ratings (Ta = 25°C)
(Note1) Package power when IC mounting on the PCB board.
The size of PCB board : 114.5×101.5×1.6(mm
3
The material of PCB board
: The FR4 glass epoxy board.
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Recommended Operating Conditions
Parameter
Symbol
Rating
Units
Min
Typ
Max
Supply Voltage
VDD
1.62
1.8
1.98
V
VDDIO
1.62
1.8 / 2.5 / 3.3
3.6
V
Operating
Temperature
Range
Ta
-40
-
85
Operating
Frequency
MODE=L
Dual-Out
Single Edge
(DDRN=H)
Input
20
-
174
MHz
LVDS Output
10
-
87
MHz
Double Edge
(DDRN=L)
Input
10
-
174
MHz
LVDS Output
10
-
174
MHz
MODE=H
Single-Out, Distribution-Out
Input
10
-
174
MHz
LVDS Output
10
-
174
MHz
DC Characteristics
Table 1. LVCMOS DC Specifications(VDDIO=1.62V~3.6V, VDD=1.62~1.98V, Ta=-40℃~+85℃)
Symbol
Parameter
Limits
Units
Conditions
Min
Typ
Max
VIH
High Level Input Voltage
VDDIO×0.65
-
VDDIO
V
-
VIL
Low Level Input Voltage
GND
-
VDDIO×0.35
V
Iinc
Input Current
-10
-
+10
μA
0V≤VIN≤VDDIO
(exclude TEST,
FLIP pins)
IRDN
Pull-Down Resister
-
50
-
kΩ
TEST, FLIP pins
Table 2. LVDS Transmitter DC Specifications(VDDIO=1.62V~3.6V, VDD=1.62V~1.98V, Ta=-40℃~+85℃)
Symbol
Parameter
Limits
Units
Conditions
Min
Typ
Max
VOD
Differential Output Voltage
250
350
450
mV
RL=100Ω
RS = H
140
200
300
mV
RS = L
ΔVOD
Change in VOD between
complementary output states
-
-
35
mV
RL=100Ω
VOC
Common Mode Voltage
1.125
1.25
1.375
V
ΔVOC
Change in VOC between
complementary output states
-
-
35
mV
Ios
Output Short Circuit Current
-
100
150
mA
VOUT=GND
Ioz
Output TRI-STATE Current
-10
-
+10
μA
PWDN=L,
VOUT=0V to VDD
Parameter
Symbol
Rating
Units
Min
Max
Supply Voltage
VDDIO
-0.3
4.0
V
VDD
-0.3
2.1
V
Input Voltage
VIN
-0.3
VDDIO+0.3
V
Output Voltage
VOUT
-0.3
VDD+0.3
V
Storage Temperature Range
Tstg
-55
125
Power Dissipation
(Note)
Pd
0.86
W


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