○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays

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TSZ02201-0H1H0B100490-1-2

© 2012 ROHM Co., Ltd. All rights reserved.

18.DEC.2012 Rev.002

TSZ22111・14・001

BA6506F

www.rohm.com

●Application circuit example(Constant values are for reference)

Substrate design note

a) IC power, motor outputs, and motor ground lines are made as fat as possible.

b) IC ground (signal ground) line is common with the application ground except motor ground (i.e. hall ground etc.),

and arranged near to (–) land.

c) The bypass capacitor and/or Zenner diode are arrangement near to Vcc terminal.

d) H+ and H– lines are arranged side by side and made from the hall element to IC as shorter as possible,

because it is easy for the noise to influence the hall lines.

Fig.9 application circuit

Take a measur e against Vcc voltage

rise gener ated by reverse connection

of current and back electrom otive

force.

Set according to t he amplitude

of hall element output and hall

input v oltage range.

Connect

a

pull-up

resis tor

because open collector out put

is set .

Lock detection ON time and lock

detection OFF time can be set.

Output Tr is equipped externally.

Provide a back electr omotive force

regenerating current route by Z enner

diode for clamping.

HALL

LOG IC

1

2

3

4

8

7

6

5

Lock

Detec t

Aut o

Restart

REG

Vcc

H+

FG

H-

GND

LD

A1

A2

+

-

HALL

AMP

+

-

+

-

0.33μF

∼4.7μF