BSZ146N10LS5 datasheet(3/11 Pages) INFINEON

Part #	BSZ146N10LS5

Description	OptiMOSTM5 Power-Transistor, 100 V

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Manufacturer	INFINEON [Infineon Technologies AG]

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OptiMOSTM5Power-Transistor,100V

BSZ146N10LS5

Rev.2.2,2016-08-10

Final Data Sheet

1Maximumratings

atTA=25°C,unlessotherwisespecified

Table2Maximumratings

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Continuous drain current

ID

-

40

28

9

A

VGS=10V,TC=25°C

VGS=10V,TC=100°C

VGS=10V,TA=25°C,RthJA=60K/W1)

Pulsed drain current

2)

ID,pulse

-

160

A

TC=25°C

Avalanche energy, single pulse

3)

EAS

-

30

mJ

ID=20A,RGS=25

Ω

Gate source voltage

VGS

-20

-

20

V

-

Power dissipation

Ptot

-

52

2.1

W

TC=25°C

TA=25°C,RthJA=60K/W1)

Operating and storage temperature

Tj,Tstg

-55

-

150

°C

IEC climatic category;

DIN IEC 68-1: 55/150/56

2Thermalcharacteristics

Table3Thermalcharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Thermal resistance, junction - case

RthJC

-

1.4

2.4

K/W

-

Device on PCB,

minimal footprint

RthJA

-

62

K/W

-

Device on PCB,

6 cm

2 cooling area1)

RthJA

-

60

K/W

-

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

2) See Diagram 3 for more detailed information

3) See Diagram 13 for more detailed information

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