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IFCM20T65GD Datasheet(PDF) 7 Page - Infineon Technologies AG |
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IFCM20T65GD Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 17 page Datasheet 7 <Revision 1.0> <2016-05-18> Control Integrated POwer System (CIPOS™) IFCM20T65GD Absolute Maximum Ratings (VDD= 15V and Tj = 25°C, if not stated otherwise) Module Section Description Condition Symbol Value Unit min max Storage temperature range Tstg -40 125 °C Isolation test voltage RMS, f=60Hz, t=1min VISOL 2000 - V Operating case temperature range Refer to Figure 6 TC -40 100 °C Power Section Description Condition Symbol Value Unit min max DC link output voltage of P-N Applied between P-N VPN - 450 V DC link output voltage (surge) of P-N Applied between P-N VPN(surge) - 500 V Max. blocking voltage IC= 250µA VCES 650 - V Repetitive peak reverse voltage IR= 250µA VRRM 650 - V Input RMS current of each phase TJ≤ 150°C, TC= 25°C TC= 80°C Ii - - 20 15 A Maximum peak input current of each phase TJ≤ 150°C, TC= 25°C less than 1ms, non-repetitive Ii(peak) - 60 A Power dissipation of each IGBT Ptot - 52.3 W Operating junction temperature range TJ -40 150 °C Single IGBT thermal resistance, junction-case RthJC - 2.39 K/W Single diode thermal resistance, junction-case RthJCD - 2.69 K/W |
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