SIA936EDJ datasheet(2/9 Pages) VISHAY

Part #	SIA936EDJ

Description	Dual N-Channel 20 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SiA936EDJ

www.vishay.com

Vishay Siliconix

S13-2624-Rev. A, 23-Dec-13

2

Document Number: 62929

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width

 300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

20

V

VDS Temperature Coefficient

V

DS/TJ

ID = 250 μA

24

mV/°C

VGS(th) Temperature Coefficient

V

GS(th)/TJ

-3.2

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

0.6

1.3

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 4.5 V

± 0.2

μA

VDS = 0 V, VGS = ± 12 V

± 10

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

1

VDS = 20 V, VGS = 0 V, TJ = 55 °C

10

On-State Drain Current a

ID(on)

VDS  5 V, VGS = 4.5 V

10

A

Drain-Source On-State Resistance a

RDS(on)

VGS = 4.5 V, ID = 4 A

0.027

0.034



VGS = 3.7 V, ID = 3 A

0.029

0.037

VGS = 2.5 V, ID = 3 A

0.035

0.045

Forward Transconductance a

gfs

VDS = 10 V, ID = 4 A

22

S

Dynamic b

Total Gate Charge

Qg

VDS = 10 V, VGS = 10 V, ID = 6 A

11.3

17

nC

VDS = 10 V, VGS = 4.5 V, ID = 6 A

5.4

8.1

Gate-Source Charge

Qgs

1

Gate-Drain Charge

Qgd

1.3

Gate Resistance

Rg

f = 1 MHz

0.4

1.8

3.6



Turn-On Delay Time

td(on)

VDD = 10 V, RL = 2 

ID  5 A, VGEN = 4.5 V, Rg = 1 

10

20

ns

Rise Time

tr

32

65

Turn-Off DelayTime

td(off)

22

45

Fall Time

tf

10

20

Turn-On Delay Time

td(on)

VDD = 10 V, RL = 2 

ID  5 A, VGEN = 10 V, Rg = 1 

10

20

Rise Time

tr

10

20

Turn-Off DelayTime

td(off)

20

40

Fall Time

tf

10

20

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

4.5

A

Pulse Diode Forward Current

ISM

20

Body Diode Voltage

VSD

IS = 5 A, VGS = 0 V

0.84

1.2

V

Body Diode Reverse Recovery Time

trr

IF = 5 A, dI/dt = 100 A/μs, TJ = 25 °C

10

20

ns

Body Diode Reverse Recovery Charge

Qrr

410

nC

Reverse Recovery Fall Time

ta

6

ns

Reverse Recovery Rise Time

tb

4

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