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NE85600 Datasheet(PDF) 1 Page - NEC |
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NE85600 Datasheet(HTML) 1 Page - NEC |
1 / 25 page PLEASE NOTE: PLEASE NOTE: PLEASE NOTE: PLEASE NOTE: PLEASE NOTE: The following part numbers The following part numbers The following part numbers The following part numbers The following part numbers from this datasheet are not from this datasheet are not from this datasheet are not from this datasheet are not from this datasheet are not recommended for new design. recommended for new design. recommended for new design. recommended for new design. recommended for new design. Please call sales office for Please call sales office for Please call sales office for Please call sales office for Please call sales office for details: details: details: details: details: NE85635 NE85635 NE85635 NE85635 NE85635 NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST Frequency, f (GHz) NE85600 NOISE FIGURE AND GAIN vs. FREQUENCY DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The NE856 series offers excellent performance and reliability at low cost. This is achieved by NEC's titanium/platinum/gold metallization sys- tem and their direct nitride passivated base surface process. The NE856 series is available in chip form and a Micro-x package for high frequency applications. It is also available in several low cost plastic package styles. 00 (CHIP) 35 (MICRO-X) 32 (TO-92) 34 (SOT 89 STYLE) 18 (SOT 343 STYLE) 19 (3 PIN ULTRA SUPER MINI MOLD) 30 (SOT 323 STYLE) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE) 39R (SOT 143R STYLE) California Eastern Laboratories 0.4 0.5 1.0 2 3 4 5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 GA MSG MAG NFMIN 20 15 10 5 VCC = 10 V, IC 7 mA |
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Similar Description - NE85600 |
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