UPA862TD-T3 datasheet(2/11 Pages) NEC

Part #	UPA862TD-T3

Description	NECs NPN SILICON RF TWIN TRANSISTOR

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Manufacturer	NEC [NEC]

Direct Link	http://www.nec.com/

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SYMBOLS

PARAMETERS

UNITS

RATINGS

Q1

Q2

VCBO

Collector to Base Voltage

V

VCEO

Collector to Emitter Voltage

V

VEBO

Emitter to Base Voltage

V

IC

Collector Current

mA

PT

Total Power Dissipation1

mW

TJ

Junction Temperature

°C

TSTG

Storage Temperature

°C

9

6

5.5

2

1.5

30

100

180

192

ABSOLUTE MAXIMUM RATINGS1,2 (TA = 25°C)

Note: 1. Operation in excess of any one of these parameters may

result in permanent damage.

2. Mounted on 1.08cm2 x 1.0 mm(t) glass epoxy PCB

UPA862TD

210 Total

150

-65 to +150

ORDERING INFORMATION

PART NUMBER

QUANTITY

PACKAGING

UPA862TD-T3

10K Pcs./Reel

Tape & Reel

TYPICAL PERFORMANCE CURVES (TA = 25°C)

Ambient Temperature, TA (°C)

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

Collector to Base Voltage, VCB (V)

REVERSE TRANSFR CAPACITANCE vs.

COLLECTOR TO BASE VOLTAGE

Collector to Base Voltage, VCB (V)

REVERSE TRANSFR CAPACITANCE vs.

COLLECTOR TO BASE VOLTAGE

300

250

200

190

180

150

100

50

0

25

50

75

100

125

150

210

Q2

Q1

2 Elements in total

Mounted on Glass Epoxy PCB

(1.08 cm

2 x 1.0 mm (t) )

0.5

0.4

0.3

0.2

0.1

0

246810

f = 1 MHz

1.0

0.8

0.6

0.4

0.2

0

246810

f = 1 MHz

Q1

Q2

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UPA862TD-T3 Datasheet(PDF) 2 Page - NEC

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