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SI7530DP Datasheet(PDF) 7 Page - Vishay Siliconix |
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SI7530DP Datasheet(HTML) 7 Page - Vishay Siliconix |
7 / 9 page Document Number: 73249 S09-0223-Rev. D, 09-Feb-09 www.vishay.com 7 Vishay Siliconix Si7530DP P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C 40 10 1 - 0.4 - 0.2 0.0 0.2 0.4 0.6 0.8 1.0 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 2468 10 VGS - Gate-to-Source Voltage (V) ID = 5 A 0.001 0 1 80 100 20 10 0.01 Time (s) 60 40 0.1 Safe Operating Area 100 1 0.1 1 10 100 0.001 10 TA = 25 °C Single Pulse 0.1 Limited by RDS(on)* 0.01 1 ms 10 ms 100 s, DC 10 µs 100 µs 100 ms 1 s 10 s VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified |
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