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SI5980DU Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI5980DU Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Vishay Siliconix Si5980DU Document Number: 65576 S10-0033-Rev. A, 11-Jan-10 www.vishay.com 1 Dual N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) 100 0.567 at VGS = 10 V 2.5 2.2 nC Ordering Information: Si5980DU-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code CE XXX Lot Traceability and Date Code Part # Code Bottom View PowerPAK® ChipFET Dual 8 7 6 5 1 2 3 4 D1 D1 D2 D2 S1 G1 S2 G2 N-Channel MOSFET G1 D1 S1 N-Channel MOSFET G2 D2 S2 Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile ( www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 2.5 A TC = 70 °C 2.0 TA = 25 °C 1.3b, c TA = 70 °C 1.0b, c Pulsed Drain Current IDM 3 Continuous Source-Drain Diode Current TC = 25 °C IS 6a TA = 25 °C 1.7b, c Single Pulse Avalanche Current L = 0.1 mH IAS 2 Avalanche Energy EAS 0.2 mJ Maximum Power Dissipation TC = 25 °C PD 7.8 W TC = 70 °C 5.0 TA = 25 °C 2.0b, c TA = 70 °C 1.3b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t ≤ 5 s RthJA 49 61 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 13 16 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Supply • Power Supply |
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