Vishay Siliconix

Si5980DU

Document Number: 65576

S10-0033-Rev. A, 11-Jan-10

www.vishay.com

1

Dual N-Channel 100-V (D-S) MOSFET

PRODUCT SUMMARY

100

2.5

2.2 nC

Ordering Information: Si5980DU-T1-GE3 (Lead (Pb)-free and Halogen-free)

Marking Code

CE

XXX

Lot Traceability

and Date Code

Part # Code

Bottom View

8

7

6

5

1

2

3

4

N-Channel MOSFET

N-Channel MOSFET

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See Solder Profile (

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 110 °C/W.

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

100

V

Gate-Source Voltage

± 20

2.5

A

2.0

Pulsed Drain Current

3

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current

L = 0.1 mH

2

Avalanche Energy

0.2

mJ

Maximum Power Dissipation

7.8

W

5.0

Operating Junction and Storage Temperature Range

- 55 to 150

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

≤ 5 s

49

61

°C/W

Maximum Junction-to-Case (Drain)

Steady State

13

16

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

•

- Small Footprint Area

- Low On-Resistance

- Thin 0.8 mm Profile

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Supply

•

Power Supply