Electronic Components Datasheet Search |
|
FF500R17KE4 Datasheet(PDF) 2 Page - Infineon Technologies AG |
|
FF500R17KE4 Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 9 page 2 TechnischeInformation/TechnicalInformation FF500R17KE4 IGBT-Modul IGBT-Module preparedby:CE approvedby:MK dateofpublication:2016-08-09 revision:V2.0 VorläufigeDaten PreliminaryData IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES 1700 V Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C IC nom 500 A PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM 1000 A Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VGES +/-20 V CharakteristischeWerte/CharacteristicValues min. typ. max. Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 500 A, VGE = 15 V IC = 500 A, VGE = 15 V IC = 500 A, VGE = 15 V VCE sat 1,95 2,35 2,45 2,30 V V V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 20,0 mA, VCE = VGE, Tvj = 25°C VGEth 5,20 5,80 6,40 V Gateladung Gatecharge VGE = -15 V ... +15 V QG 5,75 µC InternerGatewiderstand Internalgateresistor Tvj = 25°C RGint 1,3 Ω Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 45,0 nF Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 1,45 nF Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1700 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload IC = 500 A, VCE = 900 V VGE = ±15 V RGon = 1,0 Ω td on 0,22 0,25 0,26 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Anstiegszeit,induktiveLast Risetime,inductiveload IC = 500 A, VCE = 900 V VGE = ±15 V RGon = 1,0 Ω tr 0,04 0,05 0,05 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Abschaltverzögerungszeit,induktiveLast Turn-offdelaytime,inductiveload IC = 500 A, VCE = 900 V VGE = ±15 V RGoff = 1,0 Ω td off 0,53 0,67 0,71 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Fallzeit,induktiveLast Falltime,inductiveload IC = 500 A, VCE = 900 V VGE = ±15 V RGoff = 1,0 Ω tf 0,10 0,16 0,18 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C EinschaltverlustenergieproPuls Turn-onenergylossperpulse IC = 500 A, VCE = 900 V, LS = 35 nH VGE = ±15 V, di/dt = 10000 A/µs (Tvj = 150°C) RGon = 1,0 Ω Eon 91,5 130 140 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C AbschaltverlustenergieproPuls Turn-offenergylossperpulse IC = 500 A, VCE = 900 V, LS = 35 nH VGE = ±15 V, du/dt = 3000 V/µs (Tvj = 150°C) RGoff = 1,0 Ω Eoff 94,0 155 170 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C Kurzschlußverhalten SCdata VGE ≤ 15 V, VCC = 1000 V VCEmax = VCES -LsCE ·di/dt ISC 2000 A Tvj = 150°C tP ≤ 10 µs, Wärmewiderstand,ChipbisGehäuse Thermalresistance,junctiontocase proIGBT/perIGBT RthJC 0,0485 K/W Wärmewiderstand,GehäusebisKühlkörper Thermalresistance,casetoheatsink proIGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,0241 K/W TemperaturimSchaltbetrieb Temperatureunderswitchingconditions Tvj op -40 150 °C |
Similar Part No. - FF500R17KE4 |
|
Similar Description - FF500R17KE4 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |