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SI4542DY Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI4542DY Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 7 page Document Number: 70666 S09-0868-Rev. G, 18-May-09 www.vishay.com 3 Vishay Siliconix Si4542DY N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 8 16 24 32 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS = 10 V thru 5 V 3 V 4 V 0.00 0.01 0.02 0.03 0.04 0.05 0 10203040 ID - Drain Current (A) VGS = 10 V VGS = 4.5 V 0 2 4 6 8 10 0 6 12 18 24 30 Qg - Total Gate Charge (nC) VDS = 15 V ID = 6.9 A Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 10 20 30 40 0 1234 5 VGS - Gate-to-Source Voltage (V) TC = 125 °C - 55 °C 25 °C 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 6.9 A TJ - Junction Temperature (°C) |
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