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FF900R12IE4P Datasheet(PDF) 2 Page - Infineon Technologies AG |
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FF900R12IE4P Datasheet(HTML) 2 Page - Infineon Technologies AG |
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2 / 10 page  2 TechnischeInformation/TechnicalInformation FF900R12IE4P IGBT-Modul IGBT-Module preparedby:SM approvedby:RN dateofpublication:2016-03-31 revision:V2.0 VorläufigeDaten PreliminaryData IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES 1200 V Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TH = 60°C, Tvj max = 175°C IC nom 900 A PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM 1800 A Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VGES +/-20 V CharakteristischeWerte/CharacteristicValues min. typ. max. Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 900 A, VGE = 15 V IC = 900 A, VGE = 15 V IC = 900 A, VGE = 15 V VCE sat 1,75 2,05 2,10 2,10 2,45 2,50 V V V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 33,0 mA, VCE = VGE, Tvj = 25°C VGEth 5,20 5,80 6,40 V Gateladung Gatecharge VGE = -15 V ... +15 V QG 6,40 µC InternerGatewiderstand Internalgateresistor Tvj = 25°C RGint 1,2 Ω Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 54,0 nF Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 3,00 nF Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload IC = 900 A, VCE = 600 V VGE = ±15 V RGon = 1,5 Ω td on 0,20 0,22 0,22 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Anstiegszeit,induktiveLast Risetime,inductiveload IC = 900 A, VCE = 600 V VGE = ±15 V RGon = 1,5 Ω tr 0,11 0,12 0,13 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Abschaltverzögerungszeit,induktiveLast Turn-offdelaytime,inductiveload IC = 900 A, VCE = 600 V VGE = ±15 V RGoff = 1,5 Ω td off 0,66 0,75 0,79 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Fallzeit,induktiveLast Falltime,inductiveload IC = 900 A, VCE = 600 V VGE = ±15 V RGoff = 1,5 Ω tf 0,09 0,14 0,15 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C EinschaltverlustenergieproPuls Turn-onenergylossperpulse IC = 900 A, VCE = 600 V, LS = 45 nH VGE = ±15 V, di/dt = 5700 A/µs (Tvj = 150°C) RGon = 1,3 Ω Eon 55,0 70,0 80,0 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C AbschaltverlustenergieproPuls Turn-offenergylossperpulse IC = 900 A, VCE = 600 V, LS = 45 nH VGE = ±15 V, du/dt = 3200 V/µs (Tvj = 150°C) RGoff = 1,5 Ω Eoff 85,0 120 130 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C Kurzschlußverhalten SCdata VGE ≤ 15 V, VCC = 900 V VCEmax = VCES -LsCE ·di/dt ISC 3600 A Tvj = 150°C tP ≤ 10 µs, Wärmewiderstand,ChipbisKühlkörper Thermalresistance,junctiontoheatsink proIGBT/perIGBT validwithIFXpre-appliedthermalinterfacematerial RthJH 48,1 K/kW TemperaturimSchaltbetrieb Temperatureunderswitchingconditions Tvj op -40 150 °C |
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