TMS28F010B

131072 BY 8-BIT

FLASH MEMORY

SMJS824B – MAY 1995 – REVISED AUGUST 1997

1

POST OFFICE BOX 1443

EPROMs

’28F010B-90

90 ns

’28F010B-10

100 ns

’28F010B-12

120 ns

’28F010B-15

150 ns

Burn-In, and Choice of Operating

Temperature Ranges

Versions Available

and Output Lines

–Active Write . . . 55 mW

–Active Read... 165 mW

–Electrical Erase... 82.5 mW

–Standby . . . 0.55 mW

(CMOS-Input Levels)

– 40

°C to 125°C

description

The TMS28F010B is a 131 072 by 8 bit (104 8 576-bit), programmable read-only memory that can be electrically

bulk-erased and reprogrammed. It is available in 100 000 and 10 000 program / erase-endurance-cycle

versions.

The TMS28F010B Flash Memory is offered in a 32-lead plastic leaded chip-carrier package (shown above)

using 1,25-mm (50-mil) lead spacing ( FM suffix), a 32-lead thin small-outline package ( DD suffix), and a reverse

pinout TSOP package ( DU suffix)both shown on the following page.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

A0 – A16

Address Inputs

DQ0 – DQ7

Inputs (programming) / Outputs

E

Chip Enable

G

Output Enable

NC

No Internal Connection

VCC

5-V Power Supply

VPP

12-V Power Supply†

V

SS

Ground

W

Write Enable

PIN NOMENCLATURE

32 1 32 31

14

5

6

7

8

9

10

11

12

13

29

28

27

26

25

24

23

22

21

A14

A13

A8

A9

A11

G

A10

E

DQ7

A7

A6

A5

A4

A3

A2

A1

A0

DQ0

430

15 16 17 18 19

FM PACKAGE

( TOP VIEW )

20

† Only in Program Mode

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

Copyright

© 1997, Texas Instruments Incorporated